Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-02-14
2006-02-14
Blum, David S. (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S254000
Reexamination Certificate
active
06998308
ABSTRACT:
A substrate includes a plurality of insulation layers forming a laminated structure and a built-in capacitor formed in the laminated structure, wherein the laminated structure includes a layer of baked organic polysilane.
REFERENCES:
patent: 6407929 (2002-06-01), Hale et al.
patent: 6873038 (2005-03-01), Shioga et al.
patent: 6897544 (2005-05-01), Ooi et al.
patent: 2002/0070400 (2002-06-01), Shibuya et al.
patent: 2001 068858 (2001-03-01), None
patent: 2001 274034 (2001-10-01), None
Horikawa Yasuyoshi
Ooi Kiyoshi
Blum David S.
Ladas & Parry LLP
Shinko Electric Industries Co. Ltd.
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