Substrate contact and method of forming the same

Details Substrate contact and method of forming the same Substrate contact and method of forming the same

2006-05-30

2006-05-30

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S127000, C257S170000, C257S347000, C257S354000, C257S397000, C257S409000, C257S452000, C257S484000, C257S620000, C257S621000, C257S758000

Reexamination Certificate

active

07053453

ABSTRACT:
A substrate contact and semiconductor chip, and methods of forming the same. The substrate contact is employable with a semiconductor chip formed from a semiconductor substrate and includes a seal ring region about a periphery of an integrated circuit region. In one embodiment, the substrate contact includes a contact trench extending through a shallow trench isolation region and an insulator overlying the semiconductor substrate and outside the integrated circuit region. The contact trench is substantially filled with a conductive material thereby allowing the semiconductor substrate to be electrically connected with a metal interconnect within the seal ring region.

REFERENCES:
patent: 5891808 (1999-04-01), Chang et al.
patent: 6300666 (2001-10-01), Fechner et al.
patent: 6412786 (2002-07-01), Pan
patent: 6492716 (2002-12-01), Bothra et al.
patent: 6521947 (2003-02-01), Ajmera et al.
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patent: 6744112 (2004-06-01), Johnson et al.
patent: 6879023 (2005-04-01), Gutierrez
patent: 2004/0188843 (2004-09-01), Wakayama et al.

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