Substrate bias for programming non-volatile memory

Details Substrate bias for programming non-volatile memory Substrate bias for programming non-volatile memory

2006-04-04

2006-04-04

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185180, C365S185270

Reexamination Certificate

active

07023740

ABSTRACT:
A method and system for substrate bias for programming non-volatile memory. A bias voltage is applied to a deep well structure under a well comprising a channel region for a non-volatile memory cell. During programming, a negative bias applied to the deep well beneficially creates a non-uniform distribution of electrons within the channel region, with an abundance of electrons at the surface of the channel region. The application of additional bias voltages to a control gate and a drain may cause electrons to migrate from the channel region to a storage layer of the non-volatile memory cell. Advantageously, due to the increased supply of electrons at the surface of the channel region, programming of the non-volatile cell takes place faster than under the conventional art.

REFERENCES:
patent: 6307781 (2001-10-01), Shum
patent: 6493262 (2002-12-01), Wald et al.
patent: 6628544 (2003-09-01), Shum et al.
patent: 6909139 (2005-06-01), Shum et al.
patent: 2003/0218908 (2003-11-01), Park et al.

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