Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-04-02
2010-12-14
Stark, Jarrett J (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S294000, C438S591000, C257S348000, C257S310000
Reexamination Certificate
active
07851299
ABSTRACT:
The present invention provides a semiconducting device including a substrate including at least one semiconducting region and isolation regions; a gate structure atop the substrate having a gate dielectric layer positioned on the semiconducting region and a metal layer atop the gate dielectric layer, the gate structure having a width equal to or greater than the width of the at least one semiconducting region; and a contact structure including a base having a first width equal to the width of the gate structure and an upper surface having a second width, wherein the first width is greater than the second width. In one embodiment, the contact structure includes a polysilicon conductor and dielectric spacers, wherein each spacer of the dielectric spacer abuts a sidewall of the polysilicon conductor. In another embodiment, the contact structure includes a polysilicon conductor having a tapered sidewall.
REFERENCES:
patent: 6004878 (1999-12-01), Thomas et al.
patent: 6710398 (2004-03-01), Wu
patent: 2009/0243031 (2009-10-01), Natzle et al.
International Business Machines - Corporation
Schnurmann H. Daniel
Scully , Scott, Murphy & Presser, P.C.
Stark Jarrett J
Tobergte Nicholas
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