Subgroundrule space for improved metal high-k device

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Details

C438S294000, C438S591000, C257S348000, C257S310000

Reexamination Certificate

active

07851299

ABSTRACT:
The present invention provides a semiconducting device including a substrate including at least one semiconducting region and isolation regions; a gate structure atop the substrate having a gate dielectric layer positioned on the semiconducting region and a metal layer atop the gate dielectric layer, the gate structure having a width equal to or greater than the width of the at least one semiconducting region; and a contact structure including a base having a first width equal to the width of the gate structure and an upper surface having a second width, wherein the first width is greater than the second width. In one embodiment, the contact structure includes a polysilicon conductor and dielectric spacers, wherein each spacer of the dielectric spacer abuts a sidewall of the polysilicon conductor. In another embodiment, the contact structure includes a polysilicon conductor having a tapered sidewall.

REFERENCES:
patent: 6004878 (1999-12-01), Thomas et al.
patent: 6710398 (2004-03-01), Wu
patent: 2009/0243031 (2009-10-01), Natzle et al.

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