Subground rule STI fill for hot structure

Details Subground rule STI fill for hot structure Subground rule STI fill for hot structure

2008-07-01

2008-07-01

Malsawma, Lex (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S479000, C257SE21564

Reexamination Certificate

active

11623404

ABSTRACT:
This invention provides a hybrid orientation (HOT) semiconductor-on-insulator (SOI) structure having an isolation region, e.g. a shallow trench isolation region (STI), and a method for forming the STI structure that is easy to control. The method of forming the isolation region includes an etch of the insulating material, selective to the semiconductor material, followed by an etch of the semiconductor material, selective to the insulating material, and then filling any high aspect ratio gaps with a CVD oxide, and filling the remainder of the STI with an HDP oxide.

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