Sub-quarter micrometer channel field effect transistor having el

Details Sub-quarter micrometer channel field effect transistor having el Sub-quarter micrometer channel field effect transistor having el

1996-06-13

1997-04-22

Niebling, John

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257344, 257346, 257900, H01L 2976

Patent

active

056231539

ABSTRACT:
A reverse self-aligned field effect transistor having sub-quarter micrometer (<0.25 um) channel lengths, lightly doped source/drain, and shallow junction depths was achieved. The method for fabricating the FET includes a doped pad oxide layer that functions as both an etch stop layer and a diffusion source for the lightly doped drain. The doped pad oxide prevents the substrate from being etched when a channel opening for the gate electrode is etched in a source/drain polysilicon layer. The sub-quarter micrometer channel length was achieved by reducing the channel opening by sidewall spacer techniques. The shallow source/drain junctions out diffused from the polysilicon are about 0.10 to 0.15 um depth, and the lightly doped source/drain. Junctions are about 0.05 to 0.08 um depth.

REFERENCES:
patent: 5045901 (1991-09-01), Komori et al.
patent: 5071780 (1991-12-01), Tsai
patent: 5141891 (1992-08-01), Arima et al.
patent: 5196357 (1993-03-01), Boardman et al.
patent: 5270232 (1993-12-01), Kimura et al.
patent: 5374575 (1994-12-01), Kim et al.
patent: 5453635 (1995-09-01), Hsu et al.
patent: 5472897 (1995-12-01), Hsu et al.
patent: 5534447 (1996-07-01), Hong
patent: 5538913 (1996-07-01), Hong
"A Sub-0.1 .mu.m Grooved Gate MOSFET with High Immunity to Short-Channel Effects" by J. Tanaka et al, IEDM Proceedings of the IEEE, 1993, pp. 537-540, Month Unknown.

Affiliated with

Also associated with

Rating

Sub-quarter micrometer channel field effect transistor having el does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Sub-quarter micrometer channel field effect transistor having el, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sub-quarter micrometer channel field effect transistor having el will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-343421