Structures of and methods of fabricating trench-gated MIS...

Details Structures of and methods of fabricating trench-gated MIS... Structures of and methods of fabricating trench-gated MIS...

2006-02-28

2006-02-28

Thomas, Tom (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S270000, C438S589000

Reexamination Certificate

active

07005347

ABSTRACT:
In a trench-gated MIS device contact is made to the gate within the trench, thereby eliminating the need to have the gate material, typically polysilicon, extend outside of the trench. This avoids the problem of stress at the upper corners of the trench. Contact between the gate metal and the polysilicon is normally made in a gate metal region that is outside the active region of the device. Various configurations for making the contact between the gate metal and the polysilicon are described, including embodiments wherein the trench is widened in the area of contact. Since the polysilicon is etched back below the top surface of the silicon throughout the device, there is normally no need for a polysilicon mask, thereby saving fabrication costs.

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