Semiconductor device manufacturing: process – With measuring or testing
Reexamination Certificate
2005-08-09
2005-08-09
Everhart, Caridad (Department: 2825)
Semiconductor device manufacturing: process
With measuring or testing
C438S029000, C438S045000
Reexamination Certificate
active
06927080
ABSTRACT:
The present invention is generally directed to various structures for analyzing electromigration, and methods of using same. In one illustrative embodiment, the method includes forming a grating structure above a semiconducting substrate, the grating structure being comprised of a plurality of conductive features, forcing an electrical current through at least one of the conductive features until a resistance of the conductive feature increases by a preselected amount, and performing at least one scatterometric measurement of the conductive feature to determine a critical dimension of the conductive feature. In another illustrative embodiment, the method includes forming a plurality of grating structures above a semiconducting substrate, each of the grating structures being comprised of a plurality of conductive features having the same critical dimension, the critical dimension of the features of each of the plurality of grating structures being different, and forcing an electrical current through at least one of the conductive features in each of the plurality of grating structures until a resistance of the conductive feature increases by a preselected amount.
REFERENCES:
patent: 5115344 (1992-05-01), Jaskie
patent: 5400063 (1995-03-01), Kappel
patent: 6556652 (2003-04-01), Mazor et al.
patent: 2002/0017906 (2002-02-01), Ho et al.
patent: 2002/0101585 (2002-08-01), Benesch et al.
Lensing Kevin R.
Nariman Homi E.
Reeves Steven P.
Stirton James Broc
Advanced Micro Devices , Inc.
Everhart Caridad
Williams Morgan & Amerson P.C.
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