Structures and processes for reduced topography trench capacitor

Details Structures and processes for reduced topography trench capacitor Structures and processes for reduced topography trench capacitor

1998-05-28

2000-12-12

Smith, Matthew

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438386, 257522, H01L 218242

Patent

active

061597872

ABSTRACT:
A trench capacitor for use with a substrate. The capacitor has an inner electrode formed above the substrate. The inner electrode has a plurality of metal layers, a dielectric partially surrounding the inner electrode, and an outer electrode partially surrounding the dielectric.

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