Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2003-07-08
2009-02-17
Wojciechowicz, Edward (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S396000, C438S586000, C257S306000
Reexamination Certificate
active
07491602
ABSTRACT:
Systems, devices, structures, and methods are described that inhibit atomic migration that creates an open contact between a metallization layer and a conductive layer of a semiconductor structure. A layer of an inhibiting substance may be used to inhibit a net flow of atoms so as to maintain conductivity between the metallization layer and the conductive layer of the semiconductor structure. Such layer of inhibiting substance acts even with the presence of point defects for a given temperature.
REFERENCES:
patent: 5032545 (1991-07-01), Doan et al.
patent: 5068199 (1991-11-01), Sandhu
patent: 5142438 (1992-08-01), Reinberg et al.
patent: 5335138 (1994-08-01), Sandhu et al.
patent: 5440173 (1995-08-01), Evans, Jr. et al.
patent: 5573979 (1996-11-01), Tsu et al.
patent: 5604145 (1997-02-01), Hashizume et al.
patent: 5844771 (1998-12-01), Graettinger et al.
patent: 5963814 (1999-10-01), Walker et al.
patent: 5969983 (1999-10-01), Thakur et al.
patent: 5972771 (1999-10-01), Figura
patent: 6011284 (2000-01-01), Katori et al.
patent: 6171941 (2001-01-01), Park et al.
patent: 6207522 (2001-03-01), Hwang et al.
patent: 6207561 (2001-03-01), Hwang et al.
patent: 6432793 (2002-08-01), Reinberg
patent: 0697719 (1996-02-01), None
Micro)n Technology, Inc.
Schwegman Lundberg & Woessner, P.A.
Wojciechowicz Edward
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