Structures and methods for improved capacitor cells in...

Details Structures and methods for improved capacitor cells in... Structures and methods for improved capacitor cells in...

2003-07-08

2009-02-17

Wojciechowicz, Edward (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S396000, C438S586000, C257S306000

Reexamination Certificate

active

07491602

ABSTRACT:
Systems, devices, structures, and methods are described that inhibit atomic migration that creates an open contact between a metallization layer and a conductive layer of a semiconductor structure. A layer of an inhibiting substance may be used to inhibit a net flow of atoms so as to maintain conductivity between the metallization layer and the conductive layer of the semiconductor structure. Such layer of inhibiting substance acts even with the presence of point defects for a given temperature.

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