Structure to facilitate plating into high aspect ratio vias

Details Structure to facilitate plating into high aspect ratio vias Structure to facilitate plating into high aspect ratio vias

2011-06-21

2011-06-21

Malsawma, Lex (Department: 2892)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S643000, C438S653000, C438S687000, C257SE21584

Reexamination Certificate

active

07964497

ABSTRACT:
Improved high aspect ratio vias and techniques for the formation thereof are provided. In one aspect, a method of fabricating a copper plated high aspect ratio via is provided. The method comprises the following steps. A high aspect ratio via is etched in a dielectric layer. A diffusion barrier layer is deposited into the high aspect ratio via and over one or more surfaces of the dielectric layer. A copper layer is deposited over the diffusion barrier layer. A ruthenium layer is deposited over the copper layer. The high aspect ratio via is filled with copper plated onto the ruthenium layer. A copper plated high aspect ratio via formed by this method is also provided.

REFERENCES:
patent: 6069073 (2000-05-01), Kim et al.
patent: 6403491 (2002-06-01), Liu et al.
patent: 6790773 (2004-09-01), Drewery et al.
patent: 6989599 (2006-01-01), Iwasaki et al.
patent: 7253103 (2007-08-01), Iwasaki et al.
patent: 2001/0033023 (2001-10-01), Suguro
patent: 2004/0135255 (2004-07-01), Matsunaga et al.
patent: 2004/0175921 (2004-09-01), Cowley et al.
patent: 2005/0095846 (2005-05-01), Basol
patent: 2005/0181598 (2005-08-01), Kailasam
patent: 2006/0121733 (2006-06-01), Kilpela et al.
patent: 2006/0193372 (2006-08-01), McCorkle et al.
patent: 2006/0199372 (2006-09-01), Chung et al.
patent: 2007/0062817 (2007-03-01), Monchoix et al.
patent: 2007/0190780 (2007-08-01), Chung et al.
patent: 2007/0205510 (2007-09-01), Lavoie et al.
patent: 2007/0238288 (2007-10-01), Suzuki
patent: 2007/0273042 (2007-11-01), Kuhn et al.
patent: 2002-075994 (2002-03-01), None
patent: 2008-041700 (2008-02-01), None
patent: WO 2006/057706 (2006-06-01), None
patent: WO 2006/057708 (2006-06-01), None
patent: WO 2006/104853 (2006-10-01), None
Japan Office Action dated Sep. 3, 2009.
Extended European Search Report dated Jun. 2, 2009.
Japan Office Action dated Oct. 30, 2009.

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