Structure of trench isolation and a method of forming the same

Details Structure of trench isolation and a method of forming the same Structure of trench isolation and a method of forming the same

2007-01-09

2007-01-09

Deo, Duy-Vu N. (Department: 1765)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S427000, C438S428000, C438S435000

Reexamination Certificate

active

10791740

ABSTRACT:
The present invention is directed toward a structure and method by which trench isolation for a wide trench and a narrow trench formed in first and second regions of a substrate may be achieved without formation of a void in an isolation layer, a groove exposing an isolation layer, or an electrical bridge between gates in a subsequent process. A lower isolation layer is formed on the substrate in a first and second trench. The lower isolation layer is patterned to fill a lower region of the first trench, and an upper isolation pattern is formed to fill the second trench and a remainder of the first trench. An aspect ratio of first trench is reduced, thereby preventing the occurrence of a void in the upper isolation layer, or a gap between the upper isolation layer and the substrate.

REFERENCES:
patent: 4222792 (1980-09-01), Lever et al.
patent: 4671970 (1987-06-01), Keiser et al.
patent: 5382541 (1995-01-01), Bajor et al.
patent: 5387539 (1995-02-01), Yang et al.
patent: 5435888 (1995-07-01), Kalnitsky et al.
patent: 5445989 (1995-08-01), Lur et al.
patent: 5492858 (1996-02-01), Bose et al.
patent: 5504033 (1996-04-01), Bajor et al.
patent: 6030881 (2000-02-01), Papasouliotis et al.
patent: 6057209 (2000-05-01), Gardner et al.
patent: 6146970 (2000-11-01), Witek et al.
patent: 6300219 (2001-10-01), Doan et al.
patent: 6316331 (2001-11-01), Tseng
patent: 6326282 (2001-12-01), Park et al.
patent: 6335235 (2002-01-01), Bhakta et al.
patent: 6448149 (2002-09-01), Lee et al.
patent: 2002/0004282 (2002-01-01), Hong
patent: 1993-0020634 (1993-10-01), None
patent: 1995-0002190 (1993-10-01), None
Wolf, Stanley, Silicon Processing for the VSLI Era, vol. 2, Lattice Press, p. 232, (1990).

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