Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate
2006-12-15
2008-12-30
Tran, Andrew Q (Department: 2824)
Static information storage and retrieval
Systems using particular element
Flip-flop
C365S154000, C365S051000, C365S072000, C257S418000, C257S903000
Reexamination Certificate
active
07471548
ABSTRACT:
An integrated circuit (IC) is provided that includes at least one static random access memory (SRAM) cell wherein performance of the SRAM cell is enhanced, yet with good stability and writability. In particular, the present invention provides an IC including at least one SRAM cell wherein the gamma ratio is about 1 or greater. The gamma ratio is increased with degraded pFET device performance. Morever, in the inventive IC there is no stress liner boundary present in the SRAM region and ion variation for all devices is reduced as compared to that of a conventional SRAM structure. The present invention provides an integrated circuit (IC) that comprises at least one SRAM cell including at least one nFET and at least one pFET; and a continuous relaxed stressed liner located above and adjoining the nFET and the pFET.
REFERENCES:
patent: 6573172 (2003-06-01), En et al.
patent: 6984564 (2006-01-01), Huang et al.
patent: 7232730 (2007-06-01), Chen et al.
patent: 7388267 (2008-06-01), Chen et al.
patent: 2003/0040158 (2003-02-01), Saitoh
patent: 2006/0099765 (2006-05-01), Yang
patent: 2008/0142895 (2008-06-01), Baiocco et al.
Baiocco Christopher V.
Chen Xiangdong
Ko Young G.
Sherony Melanie J.
Cai Yuanmin
International Business Machines - Corporation
Samsung Electronics Co,. Ltd.
Scully , Scott, Murphy & Presser, P.C.
Tran Andrew Q
LandOfFree
Structure of static random access memory with stress... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Structure of static random access memory with stress..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structure of static random access memory with stress... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4023559