Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-11-20
2008-10-07
Le, Thao X. (Department: 2892)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257S738000
Reexamination Certificate
active
07432188
ABSTRACT:
A structure of bumps formed on an under bump metallurgy layer (UBM layer) and a method for making the same, wherein the structure includes a wafer, a UBM layer, a second photo resist and a bump. The wafer has a plurality of solder pads and a protection layer, and the protection layer covers the surface of the wafer and exposes parts of the solder pads. The UBM layer is disposed on the solder pads and the protection layers, and has an undercut structure. The second photo resist is disposed in the undercut structure. The bump is disposed on the UMB layer, so that the UMB layer will not react with the bump during a reflow process and the problem of stress concentration will be avoided so as to make the bump more stable.
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Lu Wan-Huei
Tsai Chi-Long
Advanced Semiconductor Engineering Inc.
Le Thao X.
Trice Kimberly
Volentine & Whitt P.L.L.C.
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