Structure of a non-volatile memory cell and method of...

Details Structure of a non-volatile memory cell and method of... Structure of a non-volatile memory cell and method of...

2007-08-28

2007-08-28

Crane, Sara (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S317000, C438S267000

Reexamination Certificate

active

10891076

ABSTRACT:
A flash memory cell is provided. The flash memory cell includes a substrate having a source and a drain formed therein, a bit line contact formed above the drain, a control gate formed above the substrate, a spacer floating gate formed above the substrate and adjacent to the control gate, and a first spacer formed between the bit line contact and the control gate, wherein the first spacer is in contact with both the bit line contact and the control gate.

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