Structure of a CMOS image sensor and method for fabricating...

Details Structure of a CMOS image sensor and method for fabricating... Structure of a CMOS image sensor and method for fabricating...

2005-03-01

2005-03-01

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S292000, C438S057000, C438S060000

Reexamination Certificate

active

06861686

ABSTRACT:
An image sensor device and method for forming the same include a photodiode formed in a substrate, at least one electrical interconnection line electrically associated with the photodiode, a light passageway having a light inlet, the light passageway being positioned in alignment with the photodiode, a color filter positioned over the light inlet of the light passageway and a lens positioned over the color filter in alignment with the light passageway wherein the at least one electrical interconnection line includes a copper interconnection formation having a plurality of interlayer dielectric layers in a stacked configuration with a diffusion barrier layer between adjacent interlayer dielectric layers, and a barrier metal layer between the copper interconnection formation and the plurality of interlayer dielectric layers and intervening diffusion barrier layers. An image sensor device may employ copper interconnections if a barrier metal layer is removed from above a photodiode.

REFERENCES:
patent: 20020037643 (2002-03-01), Ishimaru
patent: 20020048840 (2002-04-01), Tanigawa
patent: 20030100181 (2003-05-01), Park et al.
patent: 2002-64193 (2002-02-01), None
patent: P2001-59316 (2001-07-01), None

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