Structure for preventing gap formation and plasma processing...

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – Having glow discharge electrode gas energizing means

Reexamination Certificate

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C118S7230ER

Reexamination Certificate

active

07727354

ABSTRACT:
Plasma processing equipment having a structure for preventing gap formation includes: a chamber inside which a plasma environment is formed; an upper electrode positioned at a upper position of the chamber; an electrostatic chuck positioned at a lower position of the electrostatic chuck, having a lower electrode and holding a wafer on a top surface thereof; a ring positioned at an outer side of the electrostatic chuck; and a gap prevention unit for isolating from the outside a space between the electrostatic chuck and the ring.

REFERENCES:
patent: 6074488 (2000-06-01), Roderick et al.
patent: 6554954 (2003-04-01), Ma et al.
patent: 6723202 (2004-04-01), Nagaiwa et al.
patent: 2004/0129226 (2004-07-01), Strang et al.
patent: 2002-033376 (2002-01-01), None
patent: 2003-152063 (2003-05-01), None
patent: 20-2000-0011778 (2005-07-01), None
patent: 1020050091854 (2005-09-01), None
patent: 1020060005740 (2006-01-01), None
patent: 1020060029359 (2006-04-01), None
patent: 10-2007-0008980 (2007-01-01), None
Decision of Grant dated Jun. 23, 2008 in corresponding Korean Patent Application No. 10-2007-0002959.

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