Electricity: electrical systems and devices – Housing or mounting assemblies with diverse electrical... – For electronic systems and devices
Reexamination Certificate
1998-10-15
2001-08-07
Gandhi, Jayprakash N. (Department: 2841)
Electricity: electrical systems and devices
Housing or mounting assemblies with diverse electrical...
For electronic systems and devices
C361S761000, C361S803000, C174S261000, C257S723000
Reexamination Certificate
active
06272020
ABSTRACT:
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor device-mounting substrate that comprises a semiconductor device and a substrate on which the semiconductor device is mounted and which is equipped with a capacitor device.
Concerning a large scale integrated circuit semiconductor device (LSI) in a C-MOS circuit, the current variation as a device is magnified since a large number of circuits are switched on/off simultaneously. Moreover, speeding-up of a signal transmission increases a variation in the transient power supply voltage, thus greatly decreasing an operation margin in the circuit.
With an increase in the circuit integration in recent years and an outstanding development in the speeding-up of the signal transmission in the circuit, there turns out to be less noise margin in the circuit operation. This decrease in the noise margin is now becoming a level at which a malfunction is quite likely to occur.
Accordingly, in order to prevent the malfunction, a capacitor device, which has a capacity ranging from about hundreds of nF to tens of &mgr;F, is provided in proximity to a LSI. The capacitor device is then connected with a power supply wiring for driving the LSI, thereby causing the above-described noise to be absorbed so as to prevent the malfunction.
For example, on a substrate such as a central processing circuit substrate in a large-sized electronic computer, a power supply wiring for driving a LSI chip is connected with the above-described capacitor device in the following way: First, tens of LSI chips or tens of package substrates mounting a LSI chip thereon are provided on a multilayer wiring circuit substrate. Then, in order to connect the driving power supply wiring for each of the LSI chips with the capacitor device, the wiring is extracted onto the outside of the region on which the LSI chips or the package substrates mounting a LSI chip thereon are mounted, and a large number of capacitor devices and LSI chips are mounted on the multilayer wiring circuit substrate, thus connecting the driving power supply wiring with the capacitor device.
FIG. 7
shows an example of a prior art multilayer wiring circuit substrate which mounts a large number of package substrates mounting a LSI chip thereon, and a large number of capacitor devices.
A large number of LSI chip-mounting substrates
10
, one of which comprises a LSI chip
2
and a wiring substrate
3
mounting it thereon, are mounted on the surface of a circuit substrate
9
such as a ceramic substrate or a printed circuit substrate of a multilayer wiring structure. Also, a large number of capacitor devices
4
are connected onto the periphery of a region on which the LSI chip-mounting substrates are mounted.
Moreover, input/output pins
11
, which are designed for connecting the circuit substrate
9
with a large-sized circuit substrate (not illustrated) mounting a plurality of circuit substrates
9
thereon further, are connected with the reverse side of the circuit substrate.
A driving power supply voltage for the semiconductor devices extends from the large-sized circuit substrate (not illustrated), through the input/output pins
11
and a wiring (not illustrated) inside the circuit substrate
9
of a multilayer structure, to the capacitor devices
4
and also to a power supply-driving terminal for the LSI chip
2
.
FIG. 8
shows an example of the prior art LSI chip-mounting substrate (package substrate)
10
.
The LSI chip-mounting substrate comprises the LSI chip
2
and the wiring substrate
3
for connecting it. The LSI chip is connected onto the surface of the wiring substrate.
As a carrier of the LSI chip, the wiring substrate
3
is installed for ensuring conveniences in the care and handling of the LSI chip and an electrical inspection thereof.
Incidentally, although not illustrated here, there is, in some cases, provided a cap for hermetically sealing the LSI chip in a margin over the surface periphery of the wiring substrate
3
.
SUMMARY OF THE INVENTION
It is an object of the present invention to embody a high integration and the downsizing of a circuit substrate of a multilayer wiring structure, on which the capacitor devices are provided inside a region on which the large scale integrated circuit semiconductor devices are mounted.
It is another object of the present invention to enhance a noise-absorbing effect based on a connection with the capacitor device.
It is still another object of the present invention to cause a high frequency signal of a semiconductor device to be transmitted at high speed.
It is an even further object of the present invention to modify the circuit substrate, on which the semiconductor device-mounting substrates are provided, into a substrate which can be satisfactory as a circuit substrate for high frequency.
In the circuit substrate of a multilayer wiring structure on which, as described earlier, the large number of capacitor devices are provided outside the region on which the LSI chips are mounted, there exists a limit to a high integration of the circuit substrate or to the downsizing thereof.
Moreover, in a circuit substrate with which a high frequency band exceeding hundreds of MHz is employed and on which large-sized LSIs of 10 mm square or more are mounted, a wiring distance from a LSI to a connecting terminal of the capacitor device comes to exert a strong influence as an inductor component. This situation results in a defect that a noise-absorbing effect, which is based on the connection with the capacitor device, can not be obtained.
Meanwhile, regarding a high frequency signal of a semiconductor device, in order to cause the signal to be transmitted at high speed, it is necessary to form the signal wiring in a low dielectric material and to transmit the signal through the low dielectric material.
Concerning the prior art LSI chip-mounting substrates, however, it is not considered to simultaneously solve the above-described defect and problems. This brings about a fact that the circuit substrate, on which the semiconductor device-mounting substrates and the capacitor devices are provided, is not necessarily satisfactory as a circuit substrate for high frequency.
In order to attain the above-mentioned objects of the present invention, the present invention provides a semiconductor device-mounting substrate that comprises a semiconductor device and a wiring substrate on which the semiconductor device is mounted and which connects a capacitor device with a driving power supply wiring for the semiconductor device.
A constitution thereof is as follows: The wiring substrate has a space for providing the capacitor device, a terminal of the driving power supply wiring for the semiconductor device on the wiring substrate is provided on the surface of the space, the capacitor device is provided in the space, and thus the terminal is connected with the capacitor device.
Also, another constitution thereof is as follows: A second terminal, with which the other end of the capacitor device is connected, is provided on the surface of the above-described space. In addition, terminals of the wiring substrate in the semiconductor device-mounting substrate, which are on the side of a circuit substrate with which the semiconductor device-mounting substrate is connected, are provided in such a manner that the terminals are divided into a terminal group wired/connected to a wiring from the above-described second terminal of the wiring substrate and a terminal group wired/connected to a signal wiring of the semiconductor device on the wiring substrate.
Also, still another constitution thereof is as follows: Terminals of the wiring substrate in the semiconductor device-mounting substrate, which are on the side of a circuit substrate with which the semiconductor device-mounting substrate is connected, are provided in such a manner that the terminals are divided into a terminal group wired/connected to the other end of the capacitor device and a terminal group wired/connected to a signal wiring of the semiconductor device on the wiring substrate.
Also, a fur
Netsu Toshitada
Sengoku Norio
Takahashi Kazutoshi
Takenaka Takaji
Tosaki Hiromi
Gandhi Jayprakash N.
Hitachi , Ltd.
Mattingly Stanger & Malur, P.C.
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