Structure for monitoring semiconductor polysilicon gate profile

Details Structure for monitoring semiconductor polysilicon gate profile Structure for monitoring semiconductor polysilicon gate profile

2006-11-14

2006-11-14

Luu, Chuong Anh (Department: 2818)

Semiconductor device manufacturing: process

With measuring or testing

Electrical characteristic sensed

C438S014000

Reexamination Certificate

active

07135346

ABSTRACT:
Detection of a profile drift of a polysilicon line is enhanced by a test structure that (1) measures a bottom width and an average width of a cross sectional area of the same polysilicon line (2) correlates the two measurements, and (3) compares such correlation with a previous correlation of bottom width to average width of cross sectional area of the same polysilicon line.

REFERENCES:
patent: 6232243 (2001-05-01), Farnworth et al.
patent: 6583056 (2003-06-01), Yu et al.
patent: 2001/0007794 (2001-07-01), Kim et al.
patent: 2001/0008448 (2001-07-01), Thakur et al.
patent: 2001/0014495 (2001-08-01), Yu
patent: 2001/0017385 (2001-08-01), Yamamoto
patent: 2001/0017698 (2001-08-01), Thakur et al.
patent: 2001/0018243 (2001-08-01), Kim et al.
patent: 2001/0031538 (2001-10-01), Dekker et al.
patent: 2001/0036700 (2001-11-01), Wang et al.
patent: 2001/0055883 (2001-12-01), Kawazoe
patent: 2002/0001935 (2002-01-01), Kim et al.
patent: 2002/0003622 (2002-01-01), Thakur et al.
patent: 2002/0016044 (2002-02-01), Dreybrodt et al.
patent: 2002/0055212 (2002-05-01), Choi et al.
patent: 2002/0055226 (2002-05-01), Liu et al.
patent: 2002/0067489 (2002-06-01), Thakur et al.
patent: 2002/0068387 (2002-06-01), Tran
patent: 2002/0076866 (2002-06-01), Cherng et al.
patent: 2002/0076877 (2002-06-01), Gupta et al.
patent: 2002/0089011 (2002-07-01), Mirabel
patent: 2002/0093414 (2002-07-01), Wong et al.
patent: 2002/0115273 (2002-08-01), Chandra et al.
patent: 2002/0130373 (2002-09-01), Ueno et al.
patent: 2002/0145174 (2002-10-01), Aipperspach et al.
patent: 2002/0170487 (2002-11-01), Zehavi et al.
patent: 2002/0179967 (2002-12-01), Fujishima
patent: 2002/0197787 (2002-12-01), Tran
patent: 2003/0003686 (2003-01-01), Boyle et al.
patent: 2003/0017659 (2003-01-01), Takei et al.
patent: 2003/0017677 (2003-01-01), Yu et al.
patent: 2003/0017684 (2003-01-01), Dreybrodt et al.
patent: 2003/0045118 (2003-03-01), Wu et al.
patent: 2003/0049872 (2003-03-01), Look et al.
patent: 2003/0049905 (2003-03-01), Nitta et al.
patent: 2003/0062566 (2003-04-01), Schuegraf et al.
patent: 2003/0068898 (2003-04-01), Lee et al.
patent: 2003/0133661 (2003-07-01), Adibi et al.
patent: 2003/0150378 (2003-08-01), Winterton et al.
patent: 2003/0157755 (2003-08-01), Kitazawa et al.
patent: 2003/0181047 (2003-09-01), Chang
patent: 2003/0189253 (2003-10-01), Schuegraf et al.
patent: 2003/0224570 (2003-12-01), Shih
patent: 2004/0002189 (2004-01-01), Park
patent: 2004/0005743 (2004-01-01), Okumura et al.
patent: 2004/0015802 (2004-01-01), Cloudman et al.
patent: 2004/0018649 (2004-01-01), Shih et al.
patent: 2004/0018679 (2004-01-01), Yu et al.
patent: 2004/0029389 (2004-02-01), Lo
patent: 2004/0037134 (2004-02-01), Tran
patent: 2004/0038476 (2004-02-01), Tran
patent: 2004/0043549 (2004-03-01), Sayama et al.
patent: 2004/0056315 (2004-03-01), Ueno et al.

Affiliated with

Also associated with

Rating

Structure for monitoring semiconductor polysilicon gate profile does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Structure for monitoring semiconductor polysilicon gate profile, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structure for monitoring semiconductor polysilicon gate profile will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3623728