Structure for improved diode ideality

Details Structure for improved diode ideality Structure for improved diode ideality

2007-06-05

2007-06-05

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S212000, C257S603000, C257S551000

Reexamination Certificate

active

10906366

ABSTRACT:
A device is provided which includes a single-crystal semiconductor region disposed in a substrate. The single-crystal region includes a first semiconductor material and a diode disposed in the single-crystal region. The diode includes an anode region including a first alloy region, being an alloy of the first semiconductor material with a second semiconductor material, and a second region which consists essentially of the first semiconductor material, the diode further including a cathode region.

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