Structure for forming an improved quality silicidation layer

Details Structure for forming an improved quality silicidation layer Structure for forming an improved quality silicidation layer

1996-10-24

1998-02-10

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257751, 257757, 257768, 257770, 437192, 437193, 437200, H01L 2348, H01L 2352

Patent

active

057172536

ABSTRACT:
A semiconductor device having a silicide layer with substantially even thickness, and a method for making a silicide layer having substantially even thickness in a semiconductor device are disclosed.
A prefereably doped polycrystalline silicon layer is formed as a first conductive layer on an insulating underneath layer. After that, an undoped polycrystalline silicon is deposited on the first conductive layer as a buffer layer for preventing silicon diffusion. A second conductive layer is formed thereon. Subsequently, a refractory metal layer is formed on the second conductive layer, and a heating treatment is carried out to form a silicide layer on the first conductive layer from the materials of the buffer layer, second conductive layer and refractory metal layer.

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