Structure for deselecting broken select lines in memory arrays

Details Structure for deselecting broken select lines in memory arrays Structure for deselecting broken select lines in memory arrays

1995-07-31

1997-07-15

Dinh, Son T.

Static information storage and retrieval

Read/write circuit

Bad bit

365 63, 365 72, G11C 700

Patent

active

056489331

ABSTRACT:
According to the present invention, a structure for holding broken select lines in a memory array deselected addresses the prior art problems associated with floating broken select lines, such as standby current and disruption of attached memory cells. The structure is a non-linear, high impedance device which is placed on the end of select lines so that if a select line is broken during fabrication, the non-linear, high impedance device will hold the broken end of the select line to the desired deselect voltage. Select lines which have a driver at one end only and are broken during fabrication, but have the non-linear, high impedance device on the other end, are not allowed to float. The non-linear, high impedance device is also suitable for select lines which are not broken and previously were anchored at just one end. Suitable non-linear, high impedance devices include a reverse biased diode, a weak transistor, a bulk transistor, a poly R memory cell load device, an ON or OFF TFT memory cell load device, or other transistor structures. Additionally, the use of non-linear devices, such as transistor structures, provides the advantage of a compact layout structure that is especially suitable for high density integrated circuit memory devices.

REFERENCES:
patent: 4760559 (1988-07-01), Hidaka et al.
patent: 4905194 (1990-02-01), Ohtsuka et al.
patent: 5161121 (1992-11-01), Cho
patent: 5465233 (1995-11-01), Slemmer

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