Structure for an LDMOS transistor and fabrication method for...

Details Structure for an LDMOS transistor and fabrication method for... Structure for an LDMOS transistor and fabrication method for...

2006-07-11

2006-07-11

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S307000

Reexamination Certificate

active

07074658

ABSTRACT:
A structure for an LDMOS transistor has a horseshoe-shaped gate layer formed on a N-type layer of a semiconductor silicon substrate, in which the gate layer comprises a transverse-extending area, a first lengthwise-extending area connected to a left end of the transverse-extending area and a second lengthwise-extending area connected to a right end of the transverse-extending area. A first P-type body is formed in the N-type layer, and overlaps the left periphery of the first lengthwise-extending area of the gate layer. A second P-type body is formed in the N-type layer, and overlaps the right periphery of the second lengthwise-extending area of the gate layer.

REFERENCES:
patent: 6617656 (2003-09-01), Lee et al.
patent: 6906381 (2005-06-01), Peyre-Lavigne et al.

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