Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-08-23
2011-08-23
Lee, Cheung (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S258000, C438S275000, C257SE21421, C257SE21623
Reexamination Certificate
active
08003463
ABSTRACT:
A structure, design structure and method of manufacturing is provided for a dual metal gate Vt roll-up structure, e.g., multi-work function metal gate. The method of manufacturing the multi-work function metal gate structure comprises forming a first type of metal with a first work function in a central region and forming a second type of metal with a second work function in at least one edge region adjacent the central region. The first work-function is different from the second work function.
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Anderson Brent A.
Nowak Edward J.
International Business Machines - Corporation
Kotulak Richard
Lee Cheung
Roberts Mlotkowski Safran & Cole P.C.
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