Structure and process for the formation of TSVs

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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Details

C257SE23145, C257S774000, C438S118000, C438S622000

Reexamination Certificate

active

07843064

ABSTRACT:
An integrated circuit structure includes a semiconductor substrate; an interconnect structure over the semiconductor substrate, wherein the interconnect structure comprises a top inter-metal dielectric (IMD); an opening penetrating the interconnect structure into the semiconductor substrate; a conductor in the opening; and an isolation layer having a vertical portion and a horizontal portion physically connected to each other. The vertical portion is on sidewalls of the opening. The horizontal portion is directly over the interconnect structure. The integrated circuit structure is free from passivation layers vertically between the top IMD and the horizontal portion of the isolation layer.

REFERENCES:
patent: 6605528 (2003-08-01), Lin et al.
patent: 6642081 (2003-11-01), Patti
patent: 2005/0001327 (2005-01-01), Yamaguchi
patent: 2006/0278979 (2006-12-01), Rangel
patent: 2007/0045780 (2007-03-01), Akram et al.
patent: 2007/0132086 (2007-06-01), Agraharam et al.

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