Structure and process for reducing the on-resistance of mos-gate

Details Structure and process for reducing the on-resistance of mos-gate Structure and process for reducing the on-resistance of mos-gate

1995-11-03

1999-02-09

Dutton, Brian

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438273, H01L 21336

Patent

active

058693718

ABSTRACT:
A VDMOS structure with an added n- doping component, and a LOCOS oxide self-aligned to it, at the surface extension of the drain. The additional shallow n- component permits the body diffusion to be heavier, and hence reduces the risk of latchup.

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