Structure and process for forming semiconductor field oxide usin

Details Structure and process for forming semiconductor field oxide usin Structure and process for forming semiconductor field oxide usin

1990-03-19

1991-01-22

Simmons, David A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156653, 156657, 1566591, 156662, 437 69, 437 70, 437 72, 437 73, 437238, 437241, 357 49, 357 50, 357 54, B05D 512, H01L 21306

Patent

active

049868799

ABSTRACT:
An integrated circuit structure and fabrication process for creating field oxide regions having substantially no bird's beak, a relatively planar concluding surface, substantially no stress induced dislocations at the edges of the active regions, and a substantial absence of notches or grooves at the edges of the active silicon, by a selective combination of material dimensions and process operations. In one form of practicing the invention, the process utilizes a relatively thick pad oxide below the masking nitride layer, and a second, very thin, sidewall masking nitride layer. The thin sidewall masking nitride layer does not utilize an underlying pad oxide layer, but may include a thin underlying screening oxide. Upon oxidation, the thin sidewall nitride is concurrently lifted and converted to oxide, the materials and dimension being selected to ensure that when the field oxide level approaches the level of the thick pad oxide layer stresses at the corners of the active silicon region are relieved through various oxide paths and accentuated oxidation effects.

REFERENCES:
Chiu et al, "The Sloped-Wall SWAMI--A Defect-Free Zero Bird's Beak Local Oxidation Process for Scaled VLSI Technology", IEEE Transactions on Electron Devices, vol. ED30, No. 11, Nov. 1983.

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