Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Patent
1998-03-31
1999-08-17
Whitehead, Jr., Carl
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
257481, 257603, 257355, H01L 2900, H01L 29861, H01L 31107
Patent
active
059397675
ABSTRACT:
According to the present invention, an improved method for buried diode formation in CMOS processing is disclosed. Using a hybrid photoresist process, a self-aligning Zener diode is created using a two-step photolithography mask process. Since the process disclosed in the invention uses only the p-well and the n-well masks to create the Zener diode, photolithography alignment problems are reduced and Zener diodes can be create at the sub-micron scale.
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Brown Jeffrey S.
Holmes Steven J.
Leidy Robert K.
Voldman Steven H.
Fenty Jesse A.
International Business Machines - Corporation
Jr. Carl Whitehead
Shkurko Eugene I.
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