Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-01-10
2006-01-10
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S200000
Reexamination Certificate
active
06984564
ABSTRACT:
An SRAM in a CMOS integrated circuit is subjected to stress on the channels of its transistors; compressive stress on the pull-up and pass gate transistors and tensile stress on the pull-down transistors in a version designed to improve stability; and compressive stress on the pull-up transistors and tensile stress on the pull-down and pass gate transistors in a version designed to reduce the cell size and increase speed of operation.
REFERENCES:
patent: 2003/0181005 (2003-09-01), Hachimine et al.
patent: 2004/0029323 (2004-02-01), Shimizu et al.
patent: 2004/0217420 (2004-11-01), Yeo et al.
patent: 2005/0023633 (2005-02-01), Yeo et al.
Huang Shih-Fen
Wann Clement
Yang Haining S.
International Business Machines - Corporation
Li Todd M.C.
Malsawma Lex H.
Smith Matthew
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