Structure and method to fabricate MOSFET with short gate

Details Structure and method to fabricate MOSFET with short gate Structure and method to fabricate MOSFET with short gate

2011-05-17

2011-05-17

Le, Thao X (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S197000, C438S201000, C438S592000, C257S288000, C257S401000, C257S901000, C257S384000, C257S385000

Reexamination Certificate

active

07943467

ABSTRACT:
A method of producing a semiconducting device is provided that in one embodiment includes providing a semiconducting device including a gate structure atop a substrate, the gate structure including a dual gate conductor including an upper gate conductor and a lower gate conductor, wherein at least the lower gate conductor includes a silicon containing material; removing the upper gate conductor selective to the lower gate conductor; depositing a metal on at least the lower gate conductor; and producing a silicide from the metal and the lower gate conductor. In another embodiment, the inventive method includes a metal as the lower gate conductor.

REFERENCES:
patent: 2005/0048732 (2005-03-01), Park et al.
patent: 2005/0191833 (2005-09-01), Chang et al.
patent: 1294648 (2007-01-01), None
patent: 101159232 (2008-04-01), None

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