Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1996-10-24
1998-12-08
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257752, 257758, H01L 2348
Patent
active
058474579
ABSTRACT:
A method is provided for forming a contact opening or via of a semiconductor integrated circuit, and an integrated circuit formed according to the same. A first metal region is formed over an underlying region. A first insulating layer is formed over the integrated circuit. A second insulating layer is then formed over the first insulating layer. A portion of the second insulating layer is etched to expose a portion of the first insulating layer wherein the exposed first insulating layer and the remaining second insulating layer form a substantially planar surface. A metal oxide layer is formed over the exposed first insulating layer and the remaining second insulating layer. A photoresist layer is formed and patterned over the metal oxide layer. The metal oxide layer is then selectively etched to form a via exposing a portion of the first insulating layer. The first insulating layer in the via is then selectively etched to expose a portion of the first metal region. The photoresist layer is removed and a second metal layer is then formed over the metal oxide layer and in the via contacting the first metal region.
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Chen Fusen E.
Dixit Girish A.
Liou Fu-Tai
Galanthay Theodore E.
Hill Kenneth C.
Jorgenson Lisa K.
Potter Roy
STMicroelectronics Inc.
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