Fishing – trapping – and vermin destroying
Patent
1996-06-04
1997-12-23
Niebling, John
Fishing, trapping, and vermin destroying
437192, 437194, H01L 21443
Patent
active
057007217
ABSTRACT:
A metallization alloy for semiconductor devices comprising aluminum, copper, and tungsten is provided. In a method for applying the metallization, the metal is sputtered onto a semiconductor substrate having devices formed therein. After deposition, the metallization is patterned and etched using conventional semiconductor photoresist and etch techniques.
REFERENCES:
patent: 3725309 (1973-04-01), Ames et al.
patent: 4920403 (1990-04-01), Chow et al.
patent: 4970176 (1990-11-01), Tracy et al.
patent: 5185058 (1993-02-01), Cathey, Jr.
patent: 5360995 (1994-11-01), Graas
patent: 5554889 (1996-09-01), Shin et al.
I. Krafcsik et al. "Influence of Cu as an impurity in Al/Ti and Al/W thin-film reactions" Appl. Phys. Lett. 43(11) (Dec. 1983) pp. 1015-1017.
Prevarskiy, et al. "Phase equilibria and crystal structures of compounds in the W-Cu-Al system" Russian Metallurgy (1983) No. 5 pp. 187-189 (abstract only).
1-.mu.m EPIC process enhances TI's CMOS logic circuits, Electronics Design, June 26, 1986, p. 21.
Donald S. Gardner et al., "Layered and Homogenous Films of Aluminum and Aluminum/Silicon with Titanium and Tungsten for Multilevel Interconnects", IEEE Transactios on Electron Devices, Feb. 1985, vol. ED-32, No. 2, pp. 174-183.
J.M. Pimbley et al., VLSI Electronics Microstructure Science, Advanced CMOS Process Technology, 1989, vol. 19, pp. 66-73.
Duffin Robert L.
Freeman, Jr. John L.
Grivna Gordon
Shin Hank Hukyoo
Tracy Clarence J.
Everhart C.
Jackson Kevin B.
Motorola Inc.
Niebling John
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