Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-05-22
2007-05-22
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S275000, C438S459000, C438S938000, C257SE21633
Reexamination Certificate
active
10905978
ABSTRACT:
The present invention provides a method of forming a semiconducting substrate including the steps of providing an initial structure having first device region comprising a first orientation material and a second device region having a second orientation material; forming a first concentration of lattice modifying material atop the first orientation material; forming a second concentration of the lattice modifying material atop the second orientation material; intermixing the first concentration of lattice modifying material with the first orientation material to produce a first lattice dimension surface and the second concentration of lattice modifying material the second orientation material to produce a second lattice dimension surface; and forming a first strained semiconducting layer atop the first lattice dimension surface and a second strained semiconducting layer atop the second lattice dimension surface.
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Chen Huajie
Doris Bruce B.
Ieong Meikei
Oldiges Philip J.
Yang Min
Blecker, Esq. Ira D.
Chaudhari Chandra
International Business Machines - Corporation
Scully , Scott, Murphy & Presser, P.C.
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