Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-11-14
2006-11-14
Smith, Zandra V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S049000, C257S066000, C257S067000, C257S069000, C257S265000, C438S231000
Reexamination Certificate
active
07135724
ABSTRACT:
A field effect transistor (“FET”) is provided which includes a gate stack overlying a single-crystal semiconductor region of a substrate, a pair of first spacers disposed over sidewalls of said gate stack, and a pair of regions consisting essentially of a single-crystal semiconductor alloy which are disposed on opposite sides of the gate stack. Each of the semiconductor alloy regions is spaced a first distance from the gate stack. The source region and drain region of the FET are at least partly disposed in respective ones of the semiconductor alloy regions, such that the source region and the drain region are each spaced a second distance from the gate stack by a first spacer of the pair of first spacers, the second distance being different from the first distance.
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Chen Huajie
Chidambarrao Dureseti
Oh Sang-Hyun
Panda Siddhartha
Rausch Werner A.
C. Li Todd M.
Chiu Tsz
International Business Machines - Corporation
Kabushiki Kaisha Toshiba
Smith Zandra V.
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