Structure and method for latchup improvement using through...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S197000, C438S510000, C438S712000, C257SE21051, C257SE21182, C257SE21218, C257SE21247, C257SE21304, C257SE21421, C257SE21585

Reexamination Certificate

active

07989282

ABSTRACT:
A method and structure for preventing latchup. The structure includes a latchup sensitive structure and a through wafer via structure bounding the latch-up sensitive structure to prevent parasitic carriers from being injected into the latch-up sensitive structure.

REFERENCES:
patent: 5828110 (1998-10-01), Wollesen
patent: 5945713 (1999-08-01), Voldman
patent: 5973396 (1999-10-01), Farnworth
patent: 6278181 (2001-08-01), Maley
patent: 6313512 (2001-11-01), Schmitz et al.
patent: 6583470 (2003-06-01), Maki et al.
patent: 7335972 (2008-02-01), Chanchani
patent: 7355273 (2008-04-01), Jackson et al.
patent: 7401311 (2008-07-01), Voldman
patent: 7498622 (2009-03-01), Chapman et al.
patent: 2001/0010964 (2001-08-01), Geissler et al.
patent: 2002/0113267 (2002-08-01), Brown et al.
patent: 2004/0195651 (2004-10-01), Zhang et al.
patent: 2004/0238894 (2004-12-01), Furuta
patent: 0460861 (1991-12-01), None
patent: 63002370 (1988-01-01), None
patent: 0105055 (1989-02-01), None
patent: 2007150046 (2007-06-01), None
International Search Report and Written Opinion for corresponding International Application No. PCT/EP2010/053308.
Voldman et al., “Guard Rings: Theory, Experimental Quantification and Design”, (Date unknown).
Voldman, “Latchup and the Domino Effect”, (Date Unknown).

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