Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-08-02
2011-08-02
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S197000, C438S510000, C438S712000, C257SE21051, C257SE21182, C257SE21218, C257SE21247, C257SE21304, C257SE21421, C257SE21585
Reexamination Certificate
active
07989282
ABSTRACT:
A method and structure for preventing latchup. The structure includes a latchup sensitive structure and a through wafer via structure bounding the latch-up sensitive structure to prevent parasitic carriers from being injected into the latch-up sensitive structure.
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Canale Anthony J.
International Business Machines - Corporation
Nhu David
Roberts Mlotkowski Safran & Cole P.C.
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