Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-02-28
2006-02-28
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S283000
Reexamination Certificate
active
07005330
ABSTRACT:
In a method of forming semiconductor device, a semiconductor fin is formed on a semiconductor-on-insulator substrate. A gate dielectric is formed over at least a portion of the semiconductor fin. A first gate electrode material is formed over the gate dielectric and a second gate electrode material is formed over the first gate electrode material. The second gate electrode material is planarized and then etched selectively with respect to first gate electrode material. The first gate electrode material can then be etched.
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Yang Fu-Liang
Yeo Yee-Chia
Chaudhari Chandra
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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