Structure and method for forming SOI trench memory with...

Details Structure and method for forming SOI trench memory with... Structure and method for forming SOI trench memory with...

2007-09-26

2008-10-21

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C257SE21396

Reexamination Certificate

active

07439149

ABSTRACT:
A method of forming a trench memory cell includes forming a trench capacitor within a substrate material, the trench capacitor including a node dielectric layer formed within a trench and a conductive capacitor electrode material formed within the trench in contact with the node dielectric layer; forming a strap mask so as cover one side of the trench and removing one or more materials from an uncovered opposite side of the trench; and forming a conductive buried strap material within the trench; wherein the strap mask is patterned in a manner such that a single-sided buried strap is defined within the trench, the single-sided buried strap configured in a manner such that the deep trench capacitor is electrically accessible at only one side of the trench.

REFERENCES:
patent: 5525531 (1996-06-01), Bronner et al.
patent: 6426526 (2002-07-01), Divakaruni et al.
patent: 6498061 (2002-12-01), Divakaruni et al.
patent: 6573137 (2003-06-01), Divakaruni et al.
patent: 6872629 (2005-03-01), Hsiao et al.
patent: 7019350 (2006-03-01), Hsu
patent: 7078307 (2006-07-01), Lin et al.

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