Structure and method for forming asymmetrical overlap...

Details Structure and method for forming asymmetrical overlap... Structure and method for forming asymmetrical overlap...

2008-07-08

2008-07-08

Nguyen, Tuan H (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S302000, C438S303000, C438S306000

Reexamination Certificate

active

11163165

ABSTRACT:
A method for forming asymmetric spacer structures for a semiconductor device includes forming a spacer layer over at least a pair of adjacently spaced gate structures disposed over a semiconductor substrate. The gate structures are spaced such that the spacer layer is formed at a first thickness in a region between the gate structures and at a second thickness elsewhere, the second thickness being greater than said first thickness. The spacer layer is etched so as to form asymmetric spacer structures for the pair of adjacently spaced gate structures.

REFERENCES:
patent: 5985724 (1999-11-01), Kadosh et al.
patent: 6200864 (2001-03-01), Selcuk
patent: 6605845 (2003-08-01), Liang
patent: 6790750 (2004-09-01), Long et al.
patent: 6794256 (2004-09-01), Fuselier et al.
patent: 2003/0001195 (2003-01-01), Mori
patent: 2004/0259340 (2004-12-01), Chu et al.
patent: 2005/0014353 (2005-01-01), Mansoori et al.
patent: 2005/0106844 (2005-05-01), Tung et al.
patent: 2006/0017103 (2006-01-01), Szelag
patent: 2007/0032028 (2007-02-01), Zhu et al.

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