Structure and method for forming a dielectric chamber and...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257SE21573

Reexamination Certificate

active

11129325

ABSTRACT:
A method (and structure) that selectively forms a dielectric chamber on an electronic device by forming a dummy structure over a semiconductor substrate, depositing a dielectric layer over the dummy structure, forming an opening through the dielectric layer to the dummy structure, and removing the dummy structure to form the dielectric chamber.

REFERENCES:
patent: 5444015 (1995-08-01), Aitken et al.
patent: 6013536 (2000-01-01), Nowak et al.
patent: 6057224 (2000-05-01), Bothra et al.
patent: 6509623 (2003-01-01), Zhao

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Structure and method for forming a dielectric chamber and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Structure and method for forming a dielectric chamber and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structure and method for forming a dielectric chamber and... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3846285

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.