Structure and method for formation of a blocked silicide...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S382000, C257S384000, C257S388000, C257S412000, C257S413000, C257S486000, C257S754000, C438S791000, C438S790000, C438S595000

Reexamination Certificate

active

06853032

ABSTRACT:
A process of forming a nitride film on a semiconductor substrate including exposing a surface of the substrate to a rapid thermal process to form the nitride film.

REFERENCES:
patent: 5013677 (1991-05-01), Hozumi
patent: 5185285 (1993-02-01), Hasaka
patent: 5376593 (1994-12-01), Sandhu et al.
patent: 5445999 (1995-08-01), Thakur et al.
patent: 5466484 (1995-11-01), Spraggins et al.
patent: 5543350 (1996-08-01), Chi et al.
patent: 5629544 (1997-05-01), Voldman et al.
patent: 5652181 (1997-07-01), Thakur
patent: 5744841 (1998-04-01), Gilbert et al.
patent: 5780331 (1998-07-01), Liaw et al.
patent: 5939753 (1999-08-01), Ma et al.
patent: 5960289 (1999-09-01), Tsui et al.
patent: 6171910 (2001-01-01), Hobbs et al.
patent: 6188044 (2001-02-01), Lee et al.
patent: 6218224 (2001-04-01), Lukanc et al.
patent: 6218260 (2001-04-01), Lee et al.
patent: 6248628 (2001-06-01), Halliyal et al.
patent: 6475855 (2002-11-01), Fishburn
patent: 847077 (1998-06-01), None
patent: 6151354 (1994-05-01), None
patent: 8130215 (1996-05-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Structure and method for formation of a blocked silicide... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Structure and method for formation of a blocked silicide..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structure and method for formation of a blocked silicide... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3470659

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.