Structure and method for failure analysis in a semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – With particular power supply distribution means

Reexamination Certificate

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C257SE21521

Reexamination Certificate

active

07468530

ABSTRACT:
In a method and structure for semiconductor failure analysis, the structure comprises: a plurality of analytic fields disposed on a predetermined area of a semiconductor device; semiconductor transistors arranged in each of the analytic fields, the semiconductor transistors arranged in an array; wordlines arranged on each of the plurality of the analytic fields, connecting the semiconductor transistors with each other in a first direction; and bitline structures on each of the plurality of the analytic fields, connecting the semiconductor transistors with each other in a second direction, wherein the bitline structures are configured in different patterns in each of the plurality of analytic fields.

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patent: 10-2004-0047709 (2004-06-01), None

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