Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2011-05-24
2011-05-24
Mandala, Victor (Department: 2826)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S199000, C257SE21635
Reexamination Certificate
active
07947588
ABSTRACT:
A semiconductor device and method for fabricating a semiconductor device for providing improved work function values and thermal stability is disclosed. The semiconductor device comprises a semiconductor substrate; an interfacial dielectric layer over the semiconductor substrate; a high-k gate dielectric layer over the interfacial dielectric layer; and a doped-conducting metal oxide layer over the high-k gate dielectric layer.
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Chiu Yung-Sheng
Lin Cheng-Tung
Wang Hsiang-Yi
Yu Chen-Hua
Yu Chia-Lin
Haynes and Boone LLP
Mandala Victor
Stowe Scott
Taiwan Semiconductor Manufacturing Company , Ltd.
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