Structure and manufacturing method for DRAM capacitors

Details Structure and manufacturing method for DRAM capacitors Structure and manufacturing method for DRAM capacitors

1997-05-20

1999-04-06

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438397, 257309, 365149, H01L 2170, H01L 2700

Patent

active

058917721

ABSTRACT:
A structure and manufacturing method for DRAM capacitors includes providing a semiconductor substrate with a MOS transistor having a gate and source/drain regions formed thereon. A first insulating layer covers the semiconductor substrate. A multi-layered stack, with at least one pair of an alternately deposited second insulating layer followed by a third insulating layer, is formed above the first insulating layer. An opening is formed through the multi-layered structure and the first insulating layer exposing the source/drain region. Then, a plurality of trenches are formed on the sidewalls of the opening. A second conducting layer is formed over the exposed surfaces of the aforementioned layers. A pattern is defined on the second conducting layer so as to form a lower electrode structure. A dielectric layer is formed over the lower electrode layer. A third conducting layer is formed over the dielectric layer, and a pattern is defined on the third conducting layer to form the upper electrode structure.

REFERENCES:
patent: 5434812 (1995-07-01), Tseng
patent: 5637523 (1997-06-01), Fazan et al.
patent: 5672534 (1997-09-01), Huang
patent: 5701264 (1997-12-01), Shrivastava et al.

Affiliated with

Also associated with

Rating

Structure and manufacturing method for DRAM capacitors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Structure and manufacturing method for DRAM capacitors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structure and manufacturing method for DRAM capacitors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1371037