Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-07-22
1995-04-04
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257377, 257382, 257401, 257412, 257620, 257754, 257773, 437 40, 437 49, 437186, 437189, 437228, 437233, 437913, H01L 2968, H01L 21265
Patent
active
054040400
ABSTRACT:
A power MOSFET is created from a semiconductor body (2000 and 2001) having a main active area and a peripheral termination area. A first insulating layer (2002) of substantially uniform thickness lies over the active and termination areas. A main polycrystalline portion (2003A/2003B) lies over the first insulating layer largely above the active area. First and second peripheral polycrystalline segments (2003C1 and 2003C2) lie over the first insulating layer above the termination area.
A gate electrode (2016) contacts the main polycrystalline portion. A source electrode (2015A/2015B) contacts the active area, the termination area, and the first polycrystalline segment. An optional additional metal portion (2019) contacts the second polycrystalline segment. The MOSFET is typically created by a five-mask process. A defreckle etch is performed subsequent to metal deposition and patterning to define the two peripheral polycrystalline segments.
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Chang Mike
Chen Jun W.
Hshieh Fwu-Iuan
Linde Jan V. D.
Owyang King
Meetin Ronald J.
Siliconix incorporated
Wojciechowicz Edward
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