Structure and fabrication of power MOSFETs, including terminatio

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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257377, 257382, 257401, 257412, 257620, 257754, 257773, 437 40, 437 49, 437186, 437189, 437228, 437233, 437913, H01L 2968, H01L 21265

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054040400

ABSTRACT:
A power MOSFET is created from a semiconductor body (2000 and 2001) having a main active area and a peripheral termination area. A first insulating layer (2002) of substantially uniform thickness lies over the active and termination areas. A main polycrystalline portion (2003A/2003B) lies over the first insulating layer largely above the active area. First and second peripheral polycrystalline segments (2003C1 and 2003C2) lie over the first insulating layer above the termination area.
A gate electrode (2016) contacts the main polycrystalline portion. A source electrode (2015A/2015B) contacts the active area, the termination area, and the first polycrystalline segment. An optional additional metal portion (2019) contacts the second polycrystalline segment. The MOSFET is typically created by a five-mask process. A defreckle etch is performed subsequent to metal deposition and patterning to define the two peripheral polycrystalline segments.

REFERENCES:
patent: 4399449 (1983-08-01), Herman et al.
patent: 4532534 (1985-07-01), Ford et al.
patent: 4593302 (1986-06-01), Lidow et al.
patent: 4646117 (1987-02-01), Temple
patent: 4680853 (1987-07-01), Lidow et al.
patent: 4819044 (1989-04-01), Murakami
patent: 4974059 (1990-11-01), Kinzer
patent: 4982249 (1991-01-01), Kim et al.
patent: 5016066 (1991-05-01), Takahashi
Antognetti, Power Imtegrated Circuits: Physics, Design, and Applications (McGraw-Hill Book Co.), 1986, pp. 3.14-3.27 Dec.
Baliga, Modern Power Devices (Wiley-Interscience), 1987, pp. 62-131 Dec.
"SMP60N06, 60N05, SMP50N06, 50N05, N-Channel Enhancement Mode Transistors," MOSPOWER Data Book, Siliconix inc., 1988, pp. 4-423-4-426 Dec.

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