Structure and fabrication method of electrostatic discharge...

Details Structure and fabrication method of electrostatic discharge... Structure and fabrication method of electrostatic discharge...

2007-08-07

2007-08-07

Lee, Hsien-Ming (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S309000, C438S322000

Reexamination Certificate

active

10951373

ABSTRACT:
A structure of an electrostatic discharge protection circuit, in which a buried layer is formed in the substrate of the electrostatic discharge protection circuit, and a sinker layer electrically connected to the buried layer and a drain is also formed therein. Thereby, when the electrostatic discharge protection circuit is activated, the current flows from a source through the buried layer and the sinker layer to the drain. The current flow path is remote from the gate dielectric layer to avoid damaging the gate dielectric by a large current, so as to improve the dielectric strength of the electrostatic discharge protection circuit.

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