Stress transfer in an interlayer dielectric by providing a...

Details Stress transfer in an interlayer dielectric by providing a... Stress transfer in an interlayer dielectric by providing a...

2011-03-15

2011-03-15

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S218000, C438S694000, C257S369000, C257S372000, C257S499000, C257SE21240, C257SE21640, C257SE29255

Reexamination Certificate

active

07906383

ABSTRACT:
By forming a stressed dielectric layer on different transistors and subsequently relaxing a portion thereof, the overall process efficiency in an approach for creating strain in channel regions of transistors by stressed overlayers may be enhanced while nevertheless transistor performance gain may be obtained for each type of transistor, since a highly stressed material positioned above the previously relaxed portion may also efficiently affect the underlying transistor.

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Jun. 4, 2008 communication from our foreign associate forwarding Official Communication.
Translation of Official Communication Issued Apr. 24, 2008.

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