Stress inducing spacers

Details Stress inducing spacers Stress inducing spacers

2008-05-20

2008-05-20

Nguyen, Tuan H (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S303000

Reexamination Certificate

active

07374987

ABSTRACT:
A substrate under tension and/or compression improves performance of devices fabricated therein. Tension and/or compression can be imposed on a substrate through selection of appropriate gate sidewall spacer material disposed above a device channel region wherein the spacers are formed adjacent both the gate and the substrate and impose forces on adjacent substrate areas. Another embodiment comprises compressive stresses imposed in the plane of the channel using SOI sidewall spacers made of polysilicon that is expanded by oxidation. The substrate areas under compression or tension exhibit charge mobility characteristics different from those of a non-stressed substrate. By controllably varying these stresses within NFET and PFET devices formed on a substrate, improvements in IC performance have been demonstrated.

REFERENCES:
patent: 6057581 (2000-05-01), Doan
patent: 6075262 (2000-06-01), Moriuchi et al.
patent: 6258695 (2001-07-01), Dunn et al.
patent: 6512273 (2003-01-01), Krivokapic et al.
patent: 6524901 (2003-02-01), Trivedi
patent: 6573172 (2003-06-01), En et al.
patent: 7022561 (2006-04-01), Huang et al.
patent: 2003/0040158 (2003-02-01), Saitoh
patent: 2006/0057787 (2006-03-01), Doris et al.
IEDM 2000 “Mechanical stress effect of etch-stop nitride and its impact on deep submicron transistor design”, Ito et al., NEC Corporation, pp. 10.7.01-10.7.4.

Affiliated with

Also associated with

Rating

Stress inducing spacers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Stress inducing spacers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Stress inducing spacers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2761179