Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Flip chip
Reexamination Certificate
2006-11-30
2009-08-11
Clark, S. V (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Flip chip
C257S786000
Reexamination Certificate
active
07573138
ABSTRACT:
A stress decoupling structure provided underneath the under-ball-metallurgy (UBM) pads of a flip-chip bonding integrated circuit (IC) chip enhances the cyclic fatigue life of the solder joints formed by the solder bumps on the IC chip. The stress decoupling structure is formed from an elastic polymer layer provided over the active surface of the integrated circuit chip. A plurality of conductive metal posts are formed in the elastic polymer layer, extending between one of the contact pads on the active surface of the chip and one of the UBM pads. Solder bumps provided on the UBM pads form the solder joints between the chip and the next level interconnect structure.
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Lee Chien-Hsiun
Lii Mirng-Ji
Clark S. V
Duane Morris LLP
Taiwan Semiconductor Manufacturing Co. Ltd.
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