Strapping word lines of NAND memory devices

Details Strapping word lines of NAND memory devices Strapping word lines of NAND memory devices

2008-03-04

2008-03-04

Ngô, Ngân V. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S316000, C257S390000, C257SE29129, C257SE29300

Reexamination Certificate

active

07338866

ABSTRACT:
Conductive straps are connected to a subset of word lines of a memory device. Alternatively, first conductive straps are respectively connected only to first portions of first word lines of a memory device, and second conductive straps are respectively connected only to second portions of second word lines of the memory device, where each first word line is adjacent at least one second word line. One or more contacts can be used to connect a conductive strap to its respective word line.

REFERENCES:
patent: 5717645 (1998-02-01), Kengeri
patent: 5933387 (1999-08-01), Worley
patent: 6240046 (2001-05-01), Proebsting
patent: 6760267 (2004-07-01), Chevallier
patent: 7087468 (2006-08-01), Gonzalez et al.

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